K4H561638J-UIB0
Product Overview
Images are for reference only
| Manufacturer Part No | K4H561638J-UIB0 |
| Brand | SAMSUNG |
| Item | DDR1 SDRAM |
| Part No | 16MX16 DDR1 |
Product Details
| Package | TSOP2(66) |
| Outpack | TRAY |
| RoHS | Leaded |
| Voltage | 2.5 V |
| Temperature | -40 C~+85 C |
| Speed | 133 MHZ |
| Std. Pack Qty | |
| Std. Carton | |
| Number Of Words | 16M |
| Bit Organization | x16 |
| Density | 256M |
| Internal Banks | 4 Banks |
| Generation | 11th Generation |
| Power | Normal Power |
Available Offers
| Description | Qty | Datecode | |
|---|---|---|---|
| K4H561638J-UIB0 | 2,000 | 2009+ | Get Quote |
FFFE (Form, Fit & Functional Equivalents)
| Description | Package | Voltage | Speed | Temperature |
|---|---|---|---|---|
| EDD2516KCTA-7ASI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| EDD2516KCTA-7BSI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H561638D-TIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H561638H-UIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H561638H-UPB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
| K4H561638J-UPB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |