Images are for reference only
Manufacturer Part No | K4H561638J-UPB0 |
Brand | SAMSUNG |
Item | DDR1 SDRAM |
Part No | 16MX16 DDR1 |
Package | TSOP2(66) |
Outpack | TRAY |
RoHS | Leaded |
Voltage | 2.5 V |
Temperature | -40 C~+85 C |
Speed | 133 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 16M |
Bit Organization | x16 |
Density | 256M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Low Power |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
EDD2516KCTA-7ASI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
EDD2516KCTA-7BSI-E | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
K4H561638D-TIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
K4H561638H-UIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
K4H561638H-UPB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |
K4H561638J-UIB0 | TSOP2(66) | 2.5 V | 133 MHZ | -40 C~+85 C |