K4M281633DBN75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4M281633DBN75
Brand SAMSUNG
Item SDRAM MOBILE
Part No 8MX16 SD

Product Details

Package FBGA-54
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x16
Density 128M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 5th Generation

Available Offers

Description Qty Datecode
K4M281633DBN75 1,280 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4M281633F-BG75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN75000 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN750JR FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-RN750 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633G-BN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633H-BG750 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633H-BG75000 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633H-BG750JR FBGA-54 3.3 V 133 MHZ -25 C~+85 C