K4S511632B-TC75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S511632B-TC75
Brand SAMSUNG
Item SDRAM
Part No 32MX16 SD
Alternate Names K4S511632B-TC7500
K4S511632B-TC75000
K4S511632B-TC750T00
K4S511632B-TC75T
K4S511632B-TC75T00
K4S511632B-TC75TOO

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature 0 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4S511632B-TC75 960 Get Quote
K4S511632B-TC75 1,200 200532+ Get Quote
K4S511632B-TC75 400 2005+ Get Quote
K4S511632B-TC75 600 05+ Get Quote
K4S511632B-TC7500 2,000 04+ Get Quote
K4S511632B-TC75 1,065 Get Quote
K4S511632B-TC75 1 Get Quote
K4S511632B-TC75 1,015 Get Quote
K4S511632B-TC75 698 2006+ Get Quote
K4S511632B-TC75 700 2005+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EDS51165ABTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS51165ABTA-75 ELPIDA TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA-75-A TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA-75E TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ABTA7A TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116ADTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116AKTA-75 TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C
EDS5116AKTA-75-E TSOP2(54) 3.3 V 133 MHZ 0 C~+85 C