K4S561632BTE75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S561632BTE75
Brand SAMSUNG
Item SDRAM
Part No 16MX16 SD
Alternate Names K4S561632B-TE75000

Product Details

Package TSOP2(54)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 16M
Bit Organization x16
Density 256M
Internal Banks 4 Banks
Generation 3rd Generation
Power Normal

Available Offers

Description Qty Datecode
K4S561632BTE75 1,600 Get Quote
K4S561632BTE75 1,000 Get Quote
K4S561632BTE75 915 Get Quote
K4S561632BTE75 1,500 Get Quote
K4S561632BTE75 915 01 Get Quote
K4S561632B-TE75000 919 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S561632B-TE1L000 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C D E H-TC60 75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C D E H-TL60 75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C-RN75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C-TE75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C-TE7C TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C-TN-75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632C-TN-7C TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632D-TE75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C
K4S561632J-UN75 TSOP2(54) 3.3 V 133 MHZ -25 C~+85 C