K4S563233G-HN75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S563233G-HN75
Brand SAMSUNG
Item SDRAM
Part No 8MX32 SD
Alternate Names K4S563233G-HN7500

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x32
Density 256M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 8th Generation

Available Offers

Description Qty Datecode
K4S563233G-HN7500 2,000 2008+ Get Quote
K4S563233G-HN7500 2,000 08+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S563232F-FN75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S563233F-FE75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S563233F-FG75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S563233F-FN75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S563233F-FN75000 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S563233F-HE75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S563233F-HG75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S56323LF-FE75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S56323LF-FN75 FBGA 3.3 V 133 MHZ -25 C~+85 C
K4S56323LF-FN75000 FBGA 3.3 V 133 MHZ -25 C~+85 C