Package | TSOP2(86) |
Outpack | TRAY |
RoHS | Leaded |
Voltage | 3.3 V |
Temperature | 0 C~+85 C |
Speed | 143 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Qty | Datecode | |
---|---|---|---|
K4S643232H-TC70 | 5,860 | 03+ | Get Quote |
K4S643232H-TC70 | 1,500 | Get Quote | |
K4S643232H-TC70 | 1,748 | 2005 | Get Quote |
K4S643232H-TC70 | 1,748 | Get Quote | |
K4S643232H-TC70 | 15,000 | Get Quote | |
K4S643232H-TC70 | 15,000 | 2004 | Get Quote |
K4S643232H-TC70 | 1,000 | 2004 | Get Quote |
K4S643232H-TC70T | 1,823 | Get Quote | |
K4S643232H-TC70 | 1,149 | Get Quote | |
K4S643232H-TC70T00 | 453 | 2005+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
IC42S32200-6T/7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200-7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200-7TC6 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200/L-7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S322007TG | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32200L-7TG | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IC42S32202-7T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IS42S32200-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IS42S32200-70T | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |
IS42S32200-70TI | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+85 C |