| Package |
TSOP2(86)
|
| Outpack |
TRAY
|
| RoHS |
Leaded
|
| Voltage |
3.3 V
|
| Temperature |
0 C~+85 C
|
| Speed |
143 MHZ
|
| Std. Pack Qty |
|
| Std. Carton |
|
| Number Of Words |
2M
|
| Bit Organization |
x32
|
| Density |
64M
|
| Internal Banks |
4 Banks
|
| Generation |
9th Generation
|
| Power |
Low Power
|
GENERAL DESCRIPTION
The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated
with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
