Package | TSOP2(86) |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 3.3 V |
Temperature | -40 C~+85 C |
Speed | 143 MHZ |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Normal Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Description | Qty | Datecode | |
---|---|---|---|
K4S643232H-UI70 | 5,500 | Get Quote | |
K4S643232H-UI70 | 200 | 7 | Get Quote |
K4S643232H-UI70 | 1,373 | 0804+ | Get Quote |
K4S643232H-UI70 | 4,200 | DC07 | Get Quote |
K4S643232H-UI70 | 4,200 | 07 | Get Quote |
K4S643232H-UI70 | 2,444 | 200540+ | Get Quote |
K4S643232H-UI70 | 4,000 | Get Quote | |
K4S643232H-UI70 | 1,000 | Get Quote | |
K4S643232H-UI70 | 1,000 | 06+ | Get Quote |
K4S643232H-UI70000 | 632 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
HY57V643220CLT7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V643220CT-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V643220DLPT-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V643220DLTP-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V643220DSTP-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V643220DTP-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V643220TC-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V653220BLTC-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V653220BLTC-7I-A | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |
HY57V653220BTC-7I | TSOP2(86) | 3.3 V | 143 MHZ | -40 C~+85 C |