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Manufacturer Part No | K4T51163QG-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Alternate Names | K4T51163QG-HCE60 |
K4T51163QG-HCE600 | |
K4T51163QG-HCE600/T00 | |
K4T51163QG-HCE6000 | |
K4T51163QG-HCE60CV | |
K4T51163QG-HCE60T00 | |
K4T51163QG-HCE6: | |
K4T51163QG-HCE6T | |
K4T51163QG-HCE6T00 | |
K4T51163QG-HCE6T000 |
Package | FBGA-84 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | 1280 |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T51163QG-HCE6 | 2,451 | Get Quote | |
K4T51163QG-HCE60CV | 6,500 | Get Quote | |
K4T51163QG-HCE6T00 | 4,000 | Get Quote | |
K4T51163QG-HCE6 | 158 | 0928+ | Get Quote |
K4T51163QG-HCE6 | 3,456 | 09+ | Get Quote |
K4T51163QG-HCE6 | 2,852 | 09+ | Get Quote |
K4T51163QG-HCE6 | 110 | 09+10+ | Get Quote |
K4T51163QG-HCE6 | 2,698 | Get Quote | |
K4T51163QG-HCE6 | 1,356 | Get Quote | |
K4T51163QG-HCE6 | 32 | 200931 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
MT47H32M16HR-3TR:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E ES:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR25EGTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR31T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR3:FFBGA84T R | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |