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Manufacturer Part No | K4T51163QI-HCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Alternate Names | K4T51163QI-HCE60 |
K4T51163QI-HCE600 | |
K4T51163QI-HCE6000 | |
K4T51163QI-HCE60000 | |
K4T51163QI-HCE60CV | |
K4T51163QI-HCE60T00 | |
K4T51163QI-HCE6T | |
K4T51163QI-HCE6T00 | |
K4T51163QI-HCE6TCV |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 10th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T51163QI-HCE6000 | 38,000 | 11/12 | Get Quote |
K4T51163QI-HCE6000 | 41,912 | Get Quote | |
K4T51163QI-HCE6 | 2,000 | 2010+ | Get Quote |
K4T51163QI-HCE6 | 0 | 11+ | Get Quote |
K4T51163QI-HCE6000 | 10,000 | 2010+ | Get Quote |
K4T51163QI-HCE6 | 8,000 | 2010+ | Get Quote |
K4T51163QI-HCE6 | 4,000 | Get Quote | |
K4T51163QI-HCE6 | 19,000 | Get Quote | |
K4T51163QI-HCE6 | 6,000 | Get Quote | |
K4T51163QI-HCE6000 | 6,400 | 1137+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
EM68B16CWPA-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWPA-3H 512MB DDR2 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
EM68B16CWQC-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621AFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BEP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621BFP-Y5-C | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |