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Manufacturer Part No | K4T51163QJ-BCE6 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Alternate Names | K4T51163QJ-BCE6000 |
K4T51163QJ-BCE6000: | |
K4T51163QJ-BCE6T | |
K4T51163QJ-BCE6T00 | |
K4T51163QJ-BCE6TCV | |
K4T51163QJBCE600 |
Package | FBGA-84 |
Outpack | |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+85 C |
Speed | 667 MBPS |
Std. Pack Qty | |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T51163QJ-BCE6T00 | 20,829 | Get Quote | |
K4T51163QJ-BCE6T00 | 19,629 | Get Quote | |
K4T51163QJ-BCE6T00 | 18,021 | Get Quote | |
K4T51163QJ-BCE6 | 4,000 | Get Quote | |
K4T51163QJ-BCE6T00 | 22,417 | Get Quote | |
K4T51163QJ-BCE6T00 | 20,051 | Get Quote | |
K4T51163QJ-BCE6000 | 18,266 | Get Quote | |
K4T51163QJ-BCE6 | 136 | 14+ | Get Quote |
K4T51163QJ-BCE6 | 2,500 | 14+ | Get Quote |
K4T51163QJ-BCE6 | 10,000 | 16+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
HY5PS121621LF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS121621LFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T5121600BF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160AF-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160AF-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2C3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2F-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2F-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160B2FL-3S | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18T512160BC-3 | TFBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |