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Manufacturer Part No | K9F1G08UR0B-JIB0 |
Brand | SAMSUNG |
Item | FLASH-NAND |
Part No | 128MX8 NAND SLC |
Package | FBGA-63 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 2.7V~3.6V |
Temperature | -40 C~+85 C |
Speed | 25 NS |
Std. Pack Qty | |
Std. Carton |
GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08R0B is a 1G -bit NAND Flash Memory with spare 32M-bi t. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 42ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9F1G08R0B extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08R0B is an optimum solu- tion for large nonvolatile storage applicatins such as solid state file storage nd other portable applications requiring nonvolatility.
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
TC58BVG0S3HBAI4YCL | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI4JAH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI4YCJ | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02I5BAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4ABH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4ARH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3EBAI4BBQ | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |