K9F1G08UR0B-JIB0

Product Overview

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Manufacturer Part No K9F1G08UR0B-JIB0
Brand SAMSUNG
Item FLASH-NAND
Part No 128MX8 NAND SLC

Product Details

Package FBGA-63
Outpack TRAY
RoHS RoHS
Voltage 2.7V~3.6V
Temperature -40 C~+85 C
Speed 25 NS
Std. Pack Qty
Std. Carton

GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08R0B is a 1G -bit NAND Flash Memory with spare 32M-bi t. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 42ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9F1G08R0B extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08R0B is an optimum solu- tion for large nonvolatile storage applicatins such as solid state file storage nd other portable applications requiring nonvolatility.

Available Offers

Description Qty Datecode
K9F1G08UR0B-JIB0 0 Get Quote
K9F1G08UR0B-JIB0 10,000 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
EN27LN1G08-25CEIP BGA-63 3.3 V 25 NS -40 C~+85 C
F59L1G81MA -25BIG2Y BGA-63 3.3 V 25 NS -40 C~+85 C
H27U1G8F2BFR-BI FBGA-63 2.7V-3.6V 25 NS -40 C~+85 C
H27U1G8F2BFR-BIR FBGA-63 2.7V-3.6V 25 NS -40 C~+85 C
H27U1G8F2CFR-BI FBGA-63 2.7V-3.6V 25 NS -40 C~+85 C
IS34ML01G081-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34ML01G081-BLI-TR VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34ML01G084-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34ML08G168-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34MLI01G084-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C