圖片僅供參考
製造商IC編號 | K9F1G08UR0B-JIB0 |
廠牌 | SAMSUNG/三星 |
IC 類別 | FLASH-NAND |
IC代碼 | 128MX8 NAND SLC |
脚位/封装 | FBGA-63 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 2.7V~3.6V |
溫度規格 | -40 C~+85 C |
速度 | 25 NS |
標準包裝數量 | |
標準外箱 |
GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08R0B is a 1G -bit NAND Flash Memory with spare 32M-bi t. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 42ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9F1G08R0B extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08R0B is an optimum solu- tion for large nonvolatile storage applicatins such as solid state file storage nd other portable applications requiring nonvolatility.
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EN27LN1G08-25CEIP | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
F59L1G81MA -25BIG2Y | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
H27U1G8F2BFR-BI | FBGA-63 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U1G8F2BFR-BIR | FBGA-63 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
H27U1G8F2CFR-BI | FBGA-63 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
IS34ML01G081-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML01G081-BLI-TR | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML01G084-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34ML08G168-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
IS34MLI01G084-BLI | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |