K9F1G08UR0B-JIB0

产品概述

IC Picture

图片仅供参考

制造商IC编号 K9F1G08UR0B-JIB0
厂牌 SAMSUNG/三星
IC 类别 FLASH-NAND
IC代码 128MX8 NAND SLC

产品详情

脚位/封装 FBGA-63
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 2.7V~3.6V
温度规格 -40 C~+85 C
速度 25 NS
标准包装数量
标准外箱

GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08R0B is a 1G -bit NAND Flash Memory with spare 32M-bi t. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 42ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9F1G08R0B extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08R0B is an optimum solu- tion for large nonvolatile storage applicatins such as solid state file storage nd other portable applications requiring nonvolatility.

供应链有货

IC 编号 数量 生产年份
K9F1G08UR0B-JIB0 0 索取报价
K9F1G08UR0B-JIB0 10,000 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
EN27LN1G08-25CEIP BGA-63 3.3 V 25 NS -40 C~+85 C
F59L1G81MA -25BIG2Y BGA-63 3.3 V 25 NS -40 C~+85 C
H27U1G8F2BFR-BI FBGA-63 2.7V-3.6V 25 NS -40 C~+85 C
H27U1G8F2BFR-BIR FBGA-63 2.7V-3.6V 25 NS -40 C~+85 C
H27U1G8F2CFR-BI FBGA-63 2.7V-3.6V 25 NS -40 C~+85 C
IS34ML01G081-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34ML01G081-BLI-TR VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34ML01G084-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34ML08G168-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C
IS34MLI01G084-BLI VFBGA-63 3.3 V 25 NS -40 C~+85 C