KM416C4104BS-6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No KM416C4104BS-6
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names KM416C4104BS-60

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton

Available Offers

Description Qty Datecode
KM416C4104BS-6 180 7 Get Quote
KM416C4104BS-60 0 Get Quote
KM416C4104BS-6 2,233 07+ Get Quote
KM416C4104BS-6 78 Get Quote
KM416C4104BS-6 12,000 Get Quote
KM416C4104BS-6 252 Get Quote
KM416C4104BS-6 2,233 2000+ Get Quote
KM416C4104BS-6 18,000 1999+ Get Quote
KM416C4104BS-6 5,860 99+ Get Quote
KM416C4104BS-6 2,233 00+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K.4E641612D-PCTC-60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612-TC60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612-TL60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E6416120TC60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612B-TC60T00 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612B-TL60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612BTC60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C -GL60T00 #160 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C-CT-60 TSOP2(50) 5.0 V 60 NS 0 C~+85 C
K4E641612C-GL160 TSOP2(50) 5.0 V 60 NS 0 C~+85 C