KM416V4104CSI-6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No	KM416V4104CSI-6
Brand	SAMSUNG
Item	DRAM
Part No	4MX16 EDO

Product Details

Package	TSOP2(50)
Outpack
RoHS	Leaded
Voltage	3.3 V
Temperature	-40 C~+85 C
Speed	60 NS
Std. Pack Qty
Std. Carton

Available Offers

Description	Qty	Datecode
KM416V4104CSI-6	184	DC99	Get Quote
KM416V4104CSI-6	280	00+	Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description	Package	Voltage	Speed	Temperature
IS41LV164000-60TI	TSOP2(50)	3.3 V	60 NS	-40 C~+85 C