KM416V4104CSI-L5

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No KM416V4104CSI-L5
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -40 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton

Available Offers

Description Qty Datecode
KM416V4104CSI-L5 7,098 9 Get Quote
KM416V4104CSI-L5 39,600 10+ Get Quote
KM416V4104CSI-L5 4,000 Get Quote
KM416V4104CSI-L5 1,920 10+ Get Quote
KM416V4104CSI-L5 1,098 07+ Get Quote
KM416V4104CSI-L5 1,440 Get Quote
KM416V4104CSI-L5 5,054 1999+ Get Quote
KM416V4104CSI-L5 1,098 1999+ Get Quote
KM416V4104CSI-L5 7,500 Get Quote
KM416V4104CSI-L5 1,098 99+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IS41LV16400-50TI TSOP2(50) 3.3 V 50 NS -40 C~+85 C
K4E661612D-TP50 TSOP2(50) 3.3 V 50 NS -40 C~+85 C
KM416V4104CSI-5 TSOP2(50) 3.3 V 50 NS -40 C~+85 C
KM416V410FCSI-L5 TSOP2(50) 3.3 V 50 NS -40 C~+85 C