M29W200BB-70N6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No M29W200BB-70N6
Brand MICRON
Item FLASH-NOR
Part No 29LV200 BOTTOM

Product Details

Package TSOP-48
Outpack
RoHS Leaded
Voltage 2.7V~3.6V
Temperature -40 C~+85 C
Speed 70 NS
Std. Pack Qty
Std. Carton

SUMMARY DESCRIPTION The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Available Offers

Description Qty Datecode
M29W200BB-70N6 3,456 Get Quote
M29W200BB-70N6 2,304 Get Quote
M29W200BB-70N6 1,224 2003+ Get Quote
M29W200BB-70N6 2,001 Get Quote
M29W200BB-70N6 1,224 03+ Get Quote
M29W200BB-70N6 315 Get Quote
M29W200BB-70N6 1,200 Get Quote
M29W200BB-70N6 1,224 Get Quote
M29W200BB-70N6 4,032 Get Quote
M29W200BB-70N6 1,920 2003 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
M29W200BB-70N6T TSOP-48 2.7V~3.6V 70 NS -40 C~+85 C
M29W200DB-70N6 TSOP-48 2.7V~3.6V 70 NS -40 C~+85 C