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Manufacturer Part No | TC58NVG0S3HBAI6 |
Brand | KIOXIA |
Item | FLASH-NAND |
Part No | 128MX8 NAND SLC |
Alternate Names | TC58NVG0S3HBAI6 TRAY |
Package | BGA-67 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 3.3 V |
Temperature | -40 C~+85 C |
Speed | 25 NS |
Std. Pack Qty | 1050 |
Std. Carton | |
Number Of Words | 16M |
Bit Organization | x8 |
Density | 128M |
Mono Stack | Single Chip |
Nand Type | NAND |
Cell Level | 2 Level( 1 bits/cell ) |
Page Size | 2KB |
Design Rule | 24nm B-type |
Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 13 x 17 x 1.04, BGA[mm]: 60 balls, 8.5 x 13 *1 |
Package Material | Lead-Free: Yes, Halogen-Free: Yes |
Channel | Single, # of CE 1 |
Block Size | 128KB |
Description | Qty | Datecode | |
---|---|---|---|
TC58NVG0S3HBAI6 | 4,000 | 2022+ | Get Quote |
TC58NVG0S3HBAI6 | 56,000 | Get Quote | |
TC58NVG0S3HBAI6 | 50,400 | 17/18+ | Get Quote |
TC58NVG0S3HBAI6 | 20,280 | 22+ | Get Quote |
TC58NVG0S3HBAI6 | 52,400 | 17+/18+ | Get Quote |
TC58NVG0S3HBAI6 | 57,000 | 16+ | Get Quote |
TC58NVG0S3HBAI6 | 3,978 | Get Quote | |
TC58NVG0S3HBAI6 | 0 | Get Quote | |
TC58NVG0S3HBAI6 | 7,200 | Get Quote | |
TC58NVG0S3HBAI6 | 20,000 | - | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
S34ML01G200GHI003 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
F59L1G81MA -25BCIG2Y | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML01G200GFI000 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML01G200GHI000 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI6 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58DVG02D5BAI6 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI6 / CMP: MEM | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI6JDH | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI6Y0J | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S3HBAI6YCJ | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |
TC58NVG0S8HBAI6 | BGA-67 | 3.3 V | 25 NS | -40 C~+85 C |