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Manufacturer Part No | TC58NYG1S3HBAI4 |
Brand | KIOXIA |
Item | FLASH-NAND |
Part No | 256MX8 NAND SLC |
Alternate Names | TC58NYG1S3HBAI4 TRAY |
Package | BGA-63 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | -40 C~+85 C |
Speed | 25 NS |
Std. Pack Qty | 210 |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x8 |
Density | 256M |
Mono Stack | Single Chip |
Nand Type | NAND |
Cell Level | 2 Level( 1 bits/cell ) |
Page Size | 2KB |
Design Rule | 24nm B-type |
Package Size | TSOP[mm]: Reserved, LGA[mm]: 40 lands, 12 x 17 x 1.0, BGA[mm]: 60 balls, 9 x 11 |
Package Material | Lead-Free: Yes, Halogen-Free: Yes |
Channel | Single, # of CE 1 |
Block Size | 128KB |
Description | Qty | Datecode | |
---|---|---|---|
TC58NYG1S3HBAI4 | 2,520 | Get Quote | |
TC58NYG1S3HBAI4 | 1,050 | Get Quote | |
TC58NYG1S3HBAI4 | 2,100 | Get Quote | |
TC58NYG1S3HBAI4 | 21,000 | Get Quote | |
TC58NYG1S3HBAI4 | 100,000+ | Get Quote | |
TC58NYG1S3HBAI4 | 100,000+ | Get Quote | |
TC58NYG1S3HBAI4 | 6,000 | 13+ | Get Quote |
TC58NYG1S3HBAI4 TRAY | 170 | Get Quote | |
TC58NYG1S3HBAI4 TRAY | 20 | Get Quote | |
TC58NYG1S3HBAI4 | 10 | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
H27S2G8F2CFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
IS35MW02G084-BLA1 | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0A-JIB | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0A-JIB0 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0A-JIB0000 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0A-JIBO | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0AJIB00 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0AJIB0T | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08R0B-JIB0 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F2G08ROA-JIB0 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |