H5TC4G83EFR-RDA
产品概述
图片仅供参考
| 制造商IC编号 | H5TC4G83EFR-RDA |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 512MX8 DDR3L |
| 共通IC编号 | H5TC4G83EFR-RDAR |
产品详情
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35V |
| 温度规格 | 0 C~+95 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | 160 |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Operating Temperature | commercial temperature(0°C~85°C) & 1.35 VDD power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| Die Generation | 6th |
| No Of Banks | 8 banks |
| Product Family | DRAM |
| Shipping Method | tray |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| H5TC4G83EFR-RDA | 4,256 | 索取报价 | |
| H5TC4G83EFR-RDAR | 19,821 | 索取报价 | |
| H5TC4G83EFR-RDAR | 1,745 | 索取报价 | |
| H5TC4G83EFR-RDAR | 4,935 | 索取报价 | |
| H5TC4G83EFR-RDAR | 38,553 | 索取报价 | |
| H5TC4G83EFR-RDA | 100,000+ | 索取报价 | |
| H5TC4G83EFR-RDAR | 50,000 | 21+ | 索取报价 |
| H5TC4G83EFR-RDA | 100,000+ | 索取报价 | |
| H5TC4G83EFR-RDA | 100,000+ | 索取报价 | |
| H5TC4G83EFR-RDA | 19,200 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| AS4C512M8D3LB-10BCN | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| AS4C512M8D3LB-10BCNTR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| K4B4G0846E-BCMA0CV | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8DN-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EA-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EN-DI/EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EN-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EQ-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |