圖片僅供參考
| 製造商IC編號 | H5TC4G83EFR-RDA |
| 廠牌 | SK HYNIX/海力士 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 512MX8 DDR3L |
| 共通IC編號 | H5TC4G83EFR-RDAN |
| H5TC4G83EFR-RDAR |
| 脚位/封装 | FBGA-78 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35V |
| 溫度規格 | 0 C~+95 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | 160 |
| 標準外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Operating Temperature | commercial temperature(0°C~85°C) & 1.35 VDD power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| No Of Banks | 8 banks |
| Die Generation | 6th |
| Product Family | DRAM |
| Shipping Method | tray |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| H5TC4G83EFR-RDA | 8,000 | 2025+ | 索取報價 |
| H5TC4G83EFR-RDA | 10,000 | 23+ | 索取報價 |
| H5TC4G83EFR-RDA | 20,000 | 索取報價 | |
| H5TC4G83EFR-RDA | 2,000 | 23+ | 索取報價 |
| H5TC4G83EFR-RDA | 16,396 | 索取報價 | |
| H5TC4G83EFR-RDAN | 16,000 | 索取報價 | |
| H5TC4G83EFR-RDAR | 6,000 | 2107+ | 索取報價 |
| H5TC4G83EFR-RDA | 12,800 | 索取報價 | |
| H5TC4G83EFR-RDAR | 50,000 | 索取報價 | |
| H5TC4G83EFR-RDA | 0 | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| AS4C512M8D3LB-10BCN | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| AS4C512M8D3LB-10BCNTR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| E3CC4G80EN-EK | FBGA-78 | 1.35 V | 1866 MBPS | 0 C~+95 C |
| E3CC4G80EQ-EK | FBGA-78 | 1.35 V | 1866 MBPS | 0 C~+95 C |
| K4B4G0846E-BCMA0CV | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8DN-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EA-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EN-DI/EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EN-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |
| NT5CC512M8EQ-EK | TFBGA-78 | 1.35V | 1866 MBPS | 0 C~+95 C |