H5TQ4G63AFR-RDA

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5TQ4G63AFR-RDA
厂牌 SK HYNIX/海力士
IC 类别 DDR3 SDRAM
IC代码 256MX16 DDR3

产品详情

脚位/封装 FBGA-96
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.5 V
温度规格 0 C~+85 C
速度 1866 MBPS
标准包装数量
标准外箱
Number Of Words 256M
Bit Organization x16
Density 4G
Operating Temperature commercial temperature(0°C~85°C) & 1.35 VDD power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 2nd
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

供应链有货

IC 编号 数量 生产年份
H5TQ4G63AFR-RDA 10,800 索取报价
H5TQ4G63AFR-RDA 10,800 17+ 索取报价

FFFE/互通料号 (形式，腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
EM6GE16EWAKG-10H FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63AFR-RDCR FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63CFR-RDA FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63CFR-RDC T R FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63CFR-RDCR FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63EFR-RDA FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63EFR-RDA/PBA FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63EFR-RDC D3 256X FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63M/AFR-RDCR FBGA-96 1.5 V 1866 MBPS 0 C~+85 C
H5TQ4G63MFR-RDCR FBGA-96 1.5 V 1866 MBPS 0 C~+85 C