图片仅供参考
| 制造商IC编号 | H5TQ4G63EFR-RDA |
| 厂牌 | SK HYNIX/海力士 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 256MX16 DDR3 |
| 共通IC编号 | H5TQ4G63EFR-RDA/PBA |
| 脚位/封装 | FBGA-96 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Operating Temperature | commercial temperature(0°C~85°C) & 1.35 VDD power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| No Of Banks | 8 banks |
| Die Generation | 6th |
| Product Family | DRAM |
| Shipping Method | tray |
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| H5TQ4G63EFR-RDA | 0 | 索取报价 | |
| H5TQ4G63EFR-RDA | 12,800 | DC24+ | 索取报价 |
| H5TQ4G63EFR-RDA | 12,800 | DC22+ | 索取报价 |
| H5TQ4G63EFR-RDA | 16,000 | 索取报价 | |
| H5TQ4G63EFR-RDA | 100,000 | 索取报价 | |
| H5TQ4G63EFR-RDA | 12,800 | 22+ | 索取报价 |
| H5TQ4G63EFR-RDA | 9,600 | 索取报价 | |
| H5TQ4G63EFR-RDA | 12,800 | 2021+ | 索取报价 |
| H5TQ4G63EFR-RDA | 17,527 | 索取报价 | |
| H5TQ4G63EFR-RDA | 30,000 | 索取报价 |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6GE16EWAKG-10H | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63AFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDC T R | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDC D3 256X | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63M/AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63MFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| IS43TR16256A-107MBL | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |