图片仅供参考
制造商IC编号 | K4B2G0846D-HCH9 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3 SDRAM |
IC代码 | 256MX8 DDR3 |
共通IC编号 | K4B2G0846D-HCH90 |
K4B2G0846D-HCH900 | |
K4B2G0846D-HCH9000 | |
K4B2G0846D-HCH9T | |
K4B2G0846D-HCH9T00 | |
K4B2G0846D-HCH9TCV |
脚位/封装 | FBGA-78 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.5 V |
温度规格 | 0 C~+85 C |
速度 | 1333 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 256M |
Bit Organization | x8 |
Density | 2G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B2G0846D-HCH9 | 20,000 | 索取报价 | |
K4B2G0846D-HCH9 | 20,480 | 11+ | 索取报价 |
K4B2G0846D-HCH9 | 730 | 索取报价 | |
K4B2G0846D-HCH9 | 10,240 | 索取报价 | |
K4B2G0846D-HCH9000 | 100,000 | 12+ | 索取报价 |
K4B2G0846D-HCH9 | 858 | 索取报价 | |
K4B2G0846D-HCH9000 | 0 | NA | 索取报价 |
K4B2G0846D-HCH9000 | 4,800 | 索取报价 | |
K4B2G0846D-HCH9 | 100 | 2011+ | 索取报价 |
K4B2G0846D-HCH9 | 200 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5TQ2G83CFR-H9C 49600EA | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
H5TQ2G83CFR-H9C NBSP | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
H5TQ2G83DFR-H9CR | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
H5TQ2G83FFR-H9CR | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
HXB15H2G800CF-15H | FBGA-78 | 1.5V | 1333 MBPS | 0 C~+85 C |
IS43TR82560A-15HBL | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
IS43TR82560B-15HBL | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
IS43TR82560B-15HBL-TR | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
IS43TR82560B-15HBLC | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |
IS43TR82560C-15HBL | FBGA-78 | 1.5 V | 1333 MBPS | 0 C~+85 C |