K4B4G0846E-BYMA
产品概述
图片仅供参考
| 制造商IC编号 | K4B4G0846E-BYMA |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3L SDRAM |
| IC代码 | 512MX8 DDR3L |
| 共通IC编号 | K4B4G0846E- BYMATCV |
| K4B4G0846E-BYMA0 | |
| K4B4G0846E-BYMA000 | |
| K4B4G0846E-BYMA00P | |
| K4B4G0846E-BYMA0CV | |
| K4B4G0846E-BYMAT00 |
产品详情
| 脚位/封装 | FBGA-78 |
| 外包装 | TRAY |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.35 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | 1280 |
| 标准外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 6th Generation |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B4G0846E-BYMA | 0 | 索取报价 | |
| K4B4G0846E-BYMA000 | 10,000 | 索取报价 | |
| K4B4G0846E-BYMA | 10,240 | DC2340+ | 索取报价 |
| K4B4G0846E-BYMA000 | 1,180 | 2021+ | 索取报价 |
| K4B4G0846E-BYMA | 0 | DC23+ | 索取报价 |
| K4B4G0846E-BYMA | 10,000 | 20+ | 索取报价 |
| K4B4G0846E-BYMA | 10,000 | 20 | 索取报价 |
| K4B4G0846E-BYMA | 1,000 | 20+ | 索取报价 |
| K4B4G0846E-BYMA | 5,120 | 索取报价 | |
| K4B4G0846E-BYMA | 10,240 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5TC4G83AFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83AFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83AFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83BFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83BFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83BFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83CFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83CFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83CFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83DFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |