图片仅供参考
制造商IC编号 | K4B4G0846E-BYMA |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR3L SDRAM |
IC代码 | 512MX8 DDR3L |
共通IC编号 | K4B4G0846E- BYMATCV |
K4B4G0846E-BYMA0 | |
K4B4G0846E-BYMA000 | |
K4B4G0846E-BYMA0CV | |
K4B4G0846E-BYMAT00 |
脚位/封装 | FBGA-78 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.35V |
温度规格 | 0 C~+85 C |
速度 | 1866 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4B4G0846E-BYMA | 10,240 | 索取报价 | |
K4B4G0846E-BYMA000 | 51,200 | 23+ | 索取报价 |
K4B4G0846E-BYMA000 | 100,000 | 23+ | 索取报价 |
K4B4G0846E-BYMA | 92 | 22+ | 索取报价 |
K4B4G0846E-BYMA000 | 3,360 | 23+ | 索取报价 |
K4B4G0846E-BYMA000 | 51,301 | 23+ | 索取报价 |
K4B4G0846E-BYMA | 51,200 | 索取报价 | |
K4B4G0846E-BYMA | 100,000+ | DC23+ | 索取报价 |
K4B4G0846E-BYMA | 20,480 | 索取报价 | |
K4B4G0846E-BYMA | 1,280 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
H5TC4G83AFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83AFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83BFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83CFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
H5TC4G83DFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |