K4B4G0846E-BYMA
產品概述
圖片僅供參考
| 製造商IC編號 | K4B4G0846E-BYMA |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 512MX8 DDR3L |
| 共通IC編號 | K4B4G0846E- BYMATCV |
| K4B4G0846E-BYMA0 | |
| K4B4G0846E-BYMA000 | |
| K4B4G0846E-BYMA0CV | |
| K4B4G0846E-BYMAT00 |
產品詳情
| 脚位/封装 | FBGA-78 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | 1280 |
| 標準外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low VDD(1.35V) |
供應鏈有貨
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4B4G0846E-BYMA | 10,240 | 索取報價 | |
| K4B4G0846E-BYMA000 | 51,200 | 23+ | 索取報價 |
| K4B4G0846E-BYMA000 | 100,000 | 23+ | 索取報價 |
| K4B4G0846E-BYMA | 92 | 22+ | 索取報價 |
| K4B4G0846E-BYMA000 | 3,360 | 23+ | 索取報價 |
| K4B4G0846E-BYMA000 | 51,301 | 23+ | 索取報價 |
| K4B4G0846E-BYMA | 51,200 | 索取報價 | |
| K4B4G0846E-BYMA | 100,000+ | DC23+ | 索取報價 |
| K4B4G0846E-BYMA | 20,480 | 索取報價 | |
| K4B4G0846E-BYMA | 1,280 | 索取報價 |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| H5TC4G83AFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83AFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83AFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83BFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83BFR-RDA 1.35V | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83BFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83CFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83CFR-RDAR | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83CFR-RDC | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G83DFR-RDA | FBGA-78 | 1.35V | 1866 MBPS | 0 C~+85 C |