K4B4G1646D-BCMATDT
产品概述
图片仅供参考
| 制造商IC编号 | K4B4G1646D-BCMATDT |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR3 SDRAM |
| IC代码 | 256MX16 DDR3 |
产品详情
| 脚位/封装 | FBGA-96 |
| 外包装 | TAPE ON REEL |
| 无铅/环保 | 无铅/环保 |
| 电压(伏) | 1.5 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 5th Generation |
| Power | Normal Power |
供应链有货
| IC 编号 | 数量 | 生产年份 | |
|---|---|---|---|
| K4B4G1646D-BCMATDT | 0 | 索取报价 |
FFFE/互通料号 (形式，腳位和功能对等)
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| EM6GE16EWAKG-10H | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63AFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDC T R | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63CFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDA/PBA | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63EFR-RDC D3 256X | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |
| H5TQ4G63M/AFR-RDCR | FBGA-96 | 1.5 V | 1866 MBPS | 0 C~+85 C |