图片仅供参考
| 制造商IC编号 | K4T2G084QA-JCE6 |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR2 SDRAM |
| IC代码 | 256MX8 DDR2 |
| 脚位/封装 | FBGA-68 |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 1.8 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 667 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x8 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Normal Power |
| Generation | 2nd Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| K4T2G084QA-HCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QA-HLE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QA-ZCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QAHYE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T2G084QM-ZCE6 | FBGA-68 | 1.8 V | 667 MBPS | 0 C~+85 C |