| 脚位/封装 |
FBGA-96
|
| 外包裝 |
TRAY
|
| 無鉛/環保 |
無鉛/環保
|
| 電壓(伏) |
1.2V
|
| 溫度規格 |
0 C~+85 C
|
| 速度 |
2666 MBPS
|
| 標準包裝數量 |
|
| 標準外箱 |
|
| Number Of Words |
256M
|
| Bit Organization |
x16
|
| Density |
4G
|
| Operating Temperature |
commercial temperature(0°C ~ 85°C) & normal power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
2nd
|
| No Of Banks |
Non-TSV
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate
IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on
the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are
sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched
to achieve very high bandwidth.
