HY57V281602ETH
產品詳情
| 脚位/封装 | TSOP2(54) |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 3.3 V |
| 溫度規格 | 0 ~ 70 C |
| 速度 | 133 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Package Material | normal |
| Hynix Memory | HY |
| Die Generation | 6th Gen. |
| Power Consumption | normal power |
| Shipping Method | tray |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EDS1216AATA-75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA-75-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA-75-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA-75-F | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA-75E (LEADFREE | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA-75L-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA-75TH-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AATA75E128MTSOP | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AGTA-75 | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1216AGTA-75-E | TSOP2(54) | 3.3 V | 133 MHZ | 0 C~+70 C |