K4M281633H-BN75
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4M281633H-BN75 |
| Hersteller | SAMSUNG |
| Produktkategorie | SDRAM MOBILE |
| IC-Code | 8MX16 SD |
| Andere Bezeichnungen | K4M281633H-BN750 |
| K4M281633H-BN75000 | |
| K4M281633H-BN750JR | |
| K4M281633H-BN75T | |
| K4M281633H-BN75T00 | |
| K4M281633H-BN75TJR |
Produktbeschreibung
| Gehäuse | FBGA-54 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 3.3 V |
| Betriebstemperatur | -25 C~+85 C |
| Geschwindigkeit | 133 MHZ |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 8M |
| Bit Organization | x16 |
| Density | 128M |
| Internal Banks | 4 Banks |
| Power | Low, i-TCSR |
| Generation | 9th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4M281633H-BN75 | 376 | 06+ | Anfrage senden |
| K4M281633H-BN75 | 4.000 | Anfrage senden | |
| K4M281633H-BN75 | 114 | 11+ | Anfrage senden |
| K4M281633H-BN75 | 26 | DC08 | Anfrage senden |
| K4M281633H-BN75 | 26 | 8 | Anfrage senden |
| K4M281633H-BN75 | 12.500 | Anfrage senden | |
| K4M281633H-BN75 | 3.600 | 2010+ | Anfrage senden |
| K4M281633H-BN75 | 558 | Anfrage senden | |
| K4M281633H-BN75 | 100 | 8 | Anfrage senden |
| K4M281633H-BN75 | 1.280 | 08+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| K4M281633DBN75 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633F-BG75 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633F-BN75 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633F-BN75 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633F-BN75000 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633F-BN750JR | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633F-RN750 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633G-BN75 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633H-BG750 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |
| K4M281633H-BG75000 | FBGA-54 | 3.3 V | 133 MHZ | -25 C~+85 C |