K4M281633H-BN75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4M281633H-BN75
Brand SAMSUNG
Item SDRAM MOBILE
Part No 8MX16 SD
Alternate Names K4M281633H-BN750
K4M281633H-BN75000
K4M281633H-BN750JR
K4M281633H-BN75T
K4M281633H-BN75T00
K4M281633H-BN75TJR

Product Details

Package FBGA-54
Outpack
RoHS Leaded
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x16
Density 128M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 9th Generation

Available Offers

Description Qty Datecode
K4M281633H-BN75 376 06+ Get Quote
K4M281633H-BN75 4,000 Get Quote
K4M281633H-BN75 114 11+ Get Quote
K4M281633H-BN75 26 DC08 Get Quote
K4M281633H-BN75 26 8 Get Quote
K4M281633H-BN75 12,500 Get Quote
K4M281633H-BN75 3,600 2010+ Get Quote
K4M281633H-BN75 558 Get Quote
K4M281633H-BN75 100 8 Get Quote
K4M281633H-BN75 1,280 08+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4M281633DBN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BG75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN75000 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-BN750JR FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633F-RN750 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633G-BN75 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633H-BG750 FBGA-54 3.3 V 133 MHZ -25 C~+85 C
K4M281633H-BG75000 FBGA-54 3.3 V 133 MHZ -25 C~+85 C