K4T51163QE-ZCE6

Produktübersicht

IC Picture

Bilder dienen nur der Illustration

Hersteller-Nummer K4T51163QE-ZCE6
Hersteller SAMSUNG
Produktkategorie DDR2 SDRAM
IC-Code 32MX16 DDR2
Andere Bezeichnungen K4T51163QE-ZCE60
K4T51163QE-ZCE6000
K4T51163QE-ZCE60000
K4T51163QE-ZCE60JR
K4T51163QE-ZCE60T00
K4T51163QE-ZCE6T
K4T51163QE-ZCE6T00

Produktbeschreibung

Gehäuse FBGA-84
Verpackung TRAY
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+85 C
Geschwindigkeit 667 MBPS
Standard Stückzahl 1280
Abmessungen Karton
Number Of Words 32M
Bit Organization x16
Density 512M
Internal Banks 4 Banks
Generation 6th Generation
Power Normal Power

Verfügbare Angebote

Teilenummer Menge Datecode
K4T51163QE-ZCE6 15.680 08+ Anfrage senden
K4T51163QE-ZCE6 2.000 08+ Anfrage senden
K4T51163QE-ZCE6T 6.720 2007+ Anfrage senden
K4T51163QE-ZCE6 15.680 2008+ Anfrage senden
K4T51163QE-ZCE6 12.320 Anfrage senden
K4T51163QE-ZCE6 6.720 Anfrage senden
K4T51163QE-ZCE6 10.800 Anfrage senden
K4T51163QE-ZCE6 8.960 Anfrage senden
K4T51163QE-ZCE6 472 Anfrage senden
K4T51163QE-ZCE6 8.000 Anfrage senden

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
EM68B16CWPA-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWPA-3H 512MB DDR2 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
EM68B16CWQC-3H FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AF-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621AFP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BEP-Y5 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y4 FBGA-84 1.8 V 667 MBPS 0 C~+85 C
HY5PS121621BFP-Y5-C FBGA-84 1.8 V 667 MBPS 0 C~+85 C