Bilder dienen nur der Illustration
Hersteller-Nummer | K9K1G08ROB-JIBO |
Hersteller | SAMSUNG |
Produktkategorie | FLASH-NAND |
IC-Code | 128MX8 NAND SLC |
Gehäuse | FBGA-63 |
Verpackung | TRAY |
RoHS | RoHS |
Spannungsversorgung | 1.8 V |
Betriebstemperatur | -40 C~+85 C |
Geschwindigkeit | 25 NS |
Standard Stückzahl | |
Abmessungen Karton | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Generation | 3rd Generation |
Pre Prog Version | Serial |
Classification | SLC DDP |
Cust Bad Block | Include Bad Block |
Teilenummer | Menge | Datecode | |
---|---|---|---|
K9K1G08ROB-JIBO | 4.000 | Anfrage senden | |
K9K1G08ROB-JIBO | 4.480 | 06+ | Anfrage senden |
K9K1G08ROB-JIBO | 535 | 2008+ | Anfrage senden |
K9K1G08ROB-JIBO | 5.000 | Anfrage senden | |
K9K1G08ROB-JIBO | 500 | 2008+ | Anfrage senden |
K9K1G08ROB-JIBO | 3.952 | 2007+ | Anfrage senden |
K9K1G08ROB-JIBO | 4.000 | 2006+ | Anfrage senden |
K9K1G08ROB-JIBO | 4.480 | 2006+ | Anfrage senden |
K9K1G08ROB-JIBO | 4.885 | 06+ | Anfrage senden |
K9K1G08ROB-JIBO | 4.880 | 2006+ | Anfrage senden |
Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
---|---|---|---|---|
TC58NYG0S3EBAI4 REEL | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3EBAI4JR0 | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3EBAI4JRH | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3EBAI4LR0 | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3EBAI4LRH | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3HBAI4 | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
TC58NYG0S3HBAI4 TRAY | BGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
W29N01HZBINA | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
W29N01HZBINAS | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |