K4A4G085WE-BITD

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4A4G085WE-BITD
Brand SAMSUNG
Item DDR4 SDRAM
Part No 512MX8 DDR4
Alternate Names K4A4G085WE-BITD000

Product Details

Package FBGA-78
Outpack
RoHS RoHS
Voltage 1.2V
Temperature -40 C~+95 C
Speed 2666 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 512M
Bit Organization x8
Density 4Gb
Internal Banks 16 Banks
Generation 6th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4A4G085WE-BITD000 16,640 Get Quote
K4A4G085WE-BITD 2,000 Get Quote

Cross Reference

Description Package Voltage Speed Temperature
MT40A512M8SA-062E IT:F FBGA-78 1.2V 3200 MBPS -40 C~+95 C

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
H5AN4G8NBJR-VKI FBGA-78 1.2 V 2666 MBPS -40 C~+95 C
MT40A512M8RH-075E AIT:B FBGA-78 1.2V 2666 MBPS -40 C~+95 C
MT40A512M8RH-075E IT:B FBGA-78 1.2V 2666 MBPS -40 C~+95 C
MT40A512M8RH-075EAITB FBGA-78 1.2V 2666 MBPS -40 C~+95 C
NT5AD512M8D3-HRI TFBGA-78 1.2 V 2666 MBPS -40 C~+95 C