K4A8G165WB-BIWE

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4A8G165WB-BIWE
Brand SAMSUNG
Item DDR4 SDRAM
Part No 512MX16 DDR4
Alternate Names K4A8G165W B-BIWE0CV
K4A8G165WB-BIWETCV

Product Details

Package FBGA-96
Outpack
RoHS RoHS
Voltage 1.2 V
Temperature -40 C~+85 C
Speed 3200 MBPS
Std. Pack Qty
Std. Carton
Number Of Words 512M
Bit Organization x16
Density 8Gb
Internal Banks 16 Banks
Power Normal Power
Generation 3rd Generation

Available Offers

Description Qty Datecode
K4A8G165WB-BIWE 17,920 25+ Get Quote
K4A8G165WB-BIWE 0 Get Quote
K4A8G165WB-BIWE 20,000 Get Quote
K4A8G165WB-BIWE 20,000 22+ Get Quote
K4A8G165WB-BIWE 100,000 22+ Get Quote
K4A8G165WB-BIWE 1,630 19+ Get Quote
K4A8G165WB-BIWE 1,549 19+ Get Quote
K4A8G165WB-BIWE 91,707 22+ Get Quote
K4A8G165WB-BIWE 10,080 Get Quote
K4A8G165WB-BIWE 20,160 Get Quote

Cross Reference

Description Package Voltage Speed Temperature
MT40A512M16LY-062E IT:E FBGA-96 1.2 V 3200 MBPS -40 C~+95 C

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
IS43QR16512A-062BI FBGA-96 1.2 V 3200 MBPS -40 C~+85 C
IS43QR16512A-062BLA1 FBGA-96 1.2 V 3200 MBPS -40 C~+85 C
IS43QR16512A-062BLI FBGA-96 1.2 V 3200 MBPS -40 C~+85 C
K4A8G165W B-BIWEOCV FBGA-96 1.2 V 3200 MBPS -40 C~+85 C