Images are for reference only
Manufacturer Part No | K4B4G1646E-BINB |
Brand | SAMSUNG |
Item | DDR3 SDRAM |
Part No | 256MX16 DDR3 |
Alternate Names | K4B4G1646E-BINB0CV |
K4B4G1646E-BINBTCV |
Package | FBGA-96 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.5 V |
Temperature | -40 C~+85 C |
Speed | 2133 MBPS |
Std. Pack Qty | 1120 |
Std. Carton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
IS43TR16256A-093NBI | FBGA-96 | 1.5 V | 2133 MBPS | -40 C~+85 C |
IS43TR16256A-093NBLA1 | FBGA-96 | 1.5 V | 2133 MBPS | -40 C~+85 C |
IS43TR16256A-093NBLI | FBGA-96 | 1.5 V | 2133 MBPS | -40 C~+85 C |
IS43TR16256B-093NBI | FBGA-96 | 1.5 V | 2133 MBPS | -40 C~+85 C |
IS43TR16256B-093NBLA1 | FBGA-96 | 1.5 V | 2133 MBPS | -40 C~+85 C |
IS43TR16256B-093NBLI | FBGA-96 | 1.5 V | 2133 MBPS | -40 C~+85 C |
IS43TR16256BL-093NBI | BGA-96 | 1.35V/1.5V | 2133 MBPS | -40 C~+85 C |