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Manufacturer Part No | K4B4G1646E-BYNB000 |
Brand | SAMSUNG |
Item | DDR3L SDRAM |
Part No | 256MX16 DDR3L |
Package | FBGA-96 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.35V |
Temperature | -40 C~+85 C |
Speed | 2133 MBPS |
Std. Pack Qty | 1120 |
Std. Carton | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
Description | Qty | Datecode | |
---|---|---|---|
K4B4G1646E-BYNB000 | 11,200 | 19+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
IS43TR16256BL-093NBLA1 | BGA-96 | 1.35V/1.5V | 2133 MBPS | -40 C~+85 C |
IS43TR16256BL-093NBLI | BGA-96 | 1.35V/1.5V | 2133 MBPS | -40 C~+85 C |