K4E641612DTL150

Product Overview

IC Picture

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Manufacturer Part No K4E641612DTL150
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Low Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E641612DTL150 1,000 Get Quote
K4E641612DTL150 1,100 Get Quote
K4E641612DTL150 1,120 Get Quote
K4E641612DTL150 909 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416120-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416120-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E6416124ETC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TC50T00 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612B-TL50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC5 TSOP2(50) 5.0 V 50 NS 0 C~+85 C
K4E641612C-TC50 TSOP2(50) 5.0 V 50 NS 0 C~+85 C