K4E661612C-GL60

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E661612C-GL60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Bit Organization x16
Power Low Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4E661612C-GL60 4,000 Get Quote
K4E661612C-GL60 2,000 2000+ Get Quote
K4E661612C-GL60 427 Get Quote
K4E661612C-GL60 427 2000+ Get Quote
K4E661612C-GL60 495 00+ Get Quote
K4E661612C-GL60 404 Get Quote
K4E661612C-GL60 404 2000+ Get Quote
K4E661612C-GL60 427 00+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612C-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CD-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CE-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60T TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612DTCI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C