K4E641612D-TI60

Product Overview

IC Picture

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Manufacturer Part No K4E641612D-TI60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E641612D-TI60T
K4E641612D-TI60T00

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E641612D-TI60 4,000 Get Quote
K4E641612D-TI60 4,000 Get Quote
K4E641612D-TI60 3,500 2009+ Get Quote
K4E641612D-TI60 12,000 Get Quote
K4E641612D-TI60 10,000 2003+ Get Quote
K4E641612D-TI60 20,000 2003+ Get Quote
K4E641612D-TI60 18,209 2003+ Get Quote
K4E641612D-TI60 2,000 2005+ Get Quote
K4E641612D-TI60 3,000 2003+ Get Quote
K4E641612D-TI60 15,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612C-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CD-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CE-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612DTCI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612E-TI60000 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612E-TI60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612E-TP6 TSOP2(50) 5.0 V 60 NS -40 C~+85 C