K4E641612E-TP6

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E641612E-TP6
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E641612E-TP60000
K4E641612E-TP60T00
K4E641612ETP60

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Low Power
Generation 6th Generation

Available Offers

Description Qty Datecode
K4E641612ETP60 4,000 Get Quote
K4E641612ETP60 12,000 Get Quote
K4E641612ETP60 10,000 2003+ Get Quote
K4E641612ETP60 20,000 2003+ Get Quote
K4E641612ETP60 900 2004+ Get Quote
K4E641612ETP60 17,630 2003+ Get Quote
K4E641612ETP60 9,000 2003+ Get Quote
K4E641612ETP60 14,850 03+ Get Quote
K4E641612ETP60 148 Get Quote
K4E641612E-TP60000 2,864 Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612C-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CD-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CE-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60T TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612DTCI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C