K4E641612DTCI60

Product Overview

IC Picture

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Manufacturer Part No K4E641612DTCI60
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 60 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Power Normal Power
Generation 5th Generation

Available Offers

Description Qty Datecode
K4E641612DTCI60 2,000 2005+ Get Quote
K4E641612DTCI60 2,000 05+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612C-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612C-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CD-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612CE-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60T TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TI60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612D-TP60T00 TSOP2(50) 5.0 V 60 NS -40 C~+85 C
K4E641612E-TI60000 TSOP2(50) 5.0 V 60 NS -40 C~+85 C