K4Q160411C-BC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4Q160411C-BC50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO
Alternate Names K4Q160411C-BC50/60
K4Q160411C-BC50000
K4Q160411C-BC50000(00
K4Q160411C-BC50T00
K4Q160411C-BC50T00(00
K4Q160411C-BC50TM0
K4Q160411C-BC50TM0(00

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x4
Density 16M
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4Q160411C-BC50/60 12,000 Get Quote
K4Q160411C-BC50 6,988 2003+ Get Quote
K4Q160411C-BC50 7,800 2003+ Get Quote
K4Q160411C-BC50 2,040 03+ Get Quote
K4Q160411C-BC50 20,000 2003+ Get Quote
K4Q160411C-BC50 780 Get Quote
K4Q160411C-BC50T00 2,000 Get Quote
K4Q160411C-BC50 4,880 02 Get Quote
K4Q160411C-BC50TM0 34,000 99+ Get Quote
K4Q160411C-BC50000 26,100 99+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4Q160411C-BL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411C-FC50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411C-FL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-BC50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-BL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-FC50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-FL50 FBGA 5.0 V 50 NS 0 C~+85 C