K4Q160411C-FC50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4Q160411C-FC50
Brand SAMSUNG
Item DRAM
Part No 4MX4 EDO
Alternate Names K4Q160411C-FC50/60

Product Details

Package FBGA
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature 0 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x4
Density 16M
Power Normal Power
Generation 4th Generation

Available Offers

Description Qty Datecode
K4Q160411C-FC50/60 12,000 Get Quote
K4Q160411C-FC50 6,988 2003+ Get Quote
K4Q160411C-FC50 16,200 2003+ Get Quote
K4Q160411C-FC50 4,300 03+ Get Quote
K4Q160411C-FC50 20,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4Q160411C-BC50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411C-BL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411C-FL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-BC50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-BL50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-FC50 FBGA 5.0 V 50 NS 0 C~+85 C
K4Q160411D-FL50 FBGA 5.0 V 50 NS 0 C~+85 C