K4Q160411D-FL50

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No	K4Q160411D-FL50
Brand	SAMSUNG
Item	DRAM
Part No	4MX4 EDO

Product Details

Package	FBGA
Outpack
RoHS	Leaded
Voltage	5.0 V
Temperature	0 C~+85 C
Speed	50 NS
Std. Pack Qty
Std. Carton
Number Of Words	4M
Bit Organization	x4
Density	16M
Power	Low Power
Generation	5th Generation

Available Offers

Description	Qty	Datecode
K4Q160411D-FL50	6,988	2003+	Get Quote
K4Q160411D-FL50	20,000	2003+	Get Quote
K4Q160411D-FL50	4,300	03+	Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description	Package	Voltage	Speed	Temperature
K4Q160411C-BC50	FBGA	5.0 V	50 NS	0 C~+85 C
K4Q160411C-BL50	FBGA	5.0 V	50 NS	0 C~+85 C
K4Q160411C-FC50	FBGA	5.0 V	50 NS	0 C~+85 C
K4Q160411C-FL50	FBGA	5.0 V	50 NS	0 C~+85 C
K4Q160411D-BC50	FBGA	5.0 V	50 NS	0 C~+85 C
K4Q160411D-BL50	FBGA	5.0 V	50 NS	0 C~+85 C
K4Q160411D-FC50	FBGA	5.0 V	50 NS	0 C~+85 C