K4S281633D-BN75

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4S281633D-BN75
Brand SAMSUNG
Item SDRAM MOBILE
Part No 8MX16 SD

Product Details

Package CSP
Outpack
RoHS RoHS
Voltage 3.3 V
Temperature -25 C~+85 C
Speed 133 MHZ
Std. Pack Qty
Std. Carton
Number Of Words 8M
Bit Organization x16
Density 128M
Internal Banks 4 Banks
Power Low, i-TCSR
Generation 5th Generation

Available Offers

Description Qty Datecode
K4S281633D-BN75 1,000 Get Quote
K4S281633D-BN75 50,000 2003 Get Quote
K4S281633D-BN75 1,230 Get Quote
K4S281633D-BN75 1,230 2003+ Get Quote
K4S281633D-BN75 3,230 Get Quote
K4S281633D-BN75 38,000 03+ Get Quote
K4S281633D-BN75 1,195 03+ Get Quote
K4S281633D-BN75 38,000 Get Quote
K4S281633D-BN75 40,000 Get Quote
K4S281633D-BN75 40,000 2003+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4S281633D-RN75 CSP 3.3 V 133 MHZ -25 C~+85 C
K4S281633D-RN75T CSP 3.3 V 133 MHZ -25 C~+85 C
K4S281633D-RN75T00 CSP 3.3 V 133 MHZ -25 C~+85 C
K4S281633DRN75000 CSP 3.3 V 133 MHZ -25 C~+85 C